Junctionless Fet



The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current. Mac os for hp pavilion. FETs are devices with three terminals: source, gate, and drain. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the conductivity. High Electron Mobility Transistor — HEMT stands for High Electron Mobility Transistor, and is also called heterostructure FET (HFET) or modulation. Doping of semiconductors, Field-Effect Transistor Recommendations, Junction transistor, Junctionless transistor, P-n junction capacitance, P-N-Junction Thermal Breakdown, Tunnel breakdown of p-n. Zenmap for mac. Genuine Toshiba 2SK30A JFET. Low Noise Silicon N-channel Junction Field Effect Transistor. Sweden, Singapore, South Korea, Singapore, Vietnam, Great Britain & Canada. The junctionless transistor (JLT) is a multi-gate FET with no PN nor N+N or P+P junctions. The device is basically a resistor in which the mobile carrier density can be modulated by the gate.

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Citation Author(s):
Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu
Submitted by:
Sen Yin
Last updated:
Thu, 11/08/2018 - 10:34
DOI:
10.21227/m6xf-3898
License:
Categories:
Keywords:
junctionless (JL), SOI hybrid P/N fin channel JL thin film transistor (SOI-H-JL), double layers SOI-H-JL (SOI-DH-JL)
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Junctionless Fet

Abstract

This research examined the electrical characteristicsof a conventional junctionless silicon-on-insulator (SOI-JL) and aSOI hybrid P/N fin channel JL thin film transistor (SOI-H-JL)using a simulation with gate lengths from 60 nm to 10 nm. Theinterface location of the SOI-H-JL has a depletion region of aparallel channel, which influences the effective thickness of thechannel. The threshold voltage can be adjusted by changing theconcentration of the substrate. Better electrical characteristicsand higher transconductance can be obtained under the shortchannel when compared with the conventional SOI-JL. Althoughthe hybrid structure has better electrical characteristics, thelarger gate capacitance results in the delay time excessively longas a defect, which can be improved by thickening the raisedsource/drain area. The circuit performance is evaluated bybuilding up an inverter using aforementioned devices.

This research examined the electrical characteristicsof a conventional junctionless silicon-on-insulator (SOI-JL) and aSOI hybrid P/N fin channel JL thin film transistor (SOI-H-JL)using a simulation with gate lengths from 60 nm to 10 nm. Theinterface location of the SOI-H-JL has a depletion region of aparallel channel, which influences the effective thickness of thechannel. The threshold voltage can be adjusted by changing theconcentration of the substrate. Better electrical characteristicsand higher transconductance can be obtained under the shortchannel when compared with the conventional SOI-JL. Althoughthe hybrid structure has better electrical characteristics, thelarger gate capacitance results in the delay time excessively longas a defect, which can be improved by thickening the raisedsource/drain area. The circuit performance is evaluated bybuilding up an inverter using aforementioned devices.

Junctionless Tunnel Fet

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Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu, August 6, 2018, 'An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET', IEEE Dataport, doi: https://dx.doi.org/10.21227/m6xf-3898.
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doi = {10.21227/m6xf-3898},
url = {https://dx.doi.org/10.21227/m6xf-3898},
author = {Cheng-Kuei Lee; Sen Yin; Jin-Yu Zhang; Zuo-Chang Ye;Yan Wang nad Zhi-ping Yu },
publisher = {IEEE Dataport},
title = {An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET},
year = {2018} }
TY - DATA
T1 - An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET
AU - Cheng-Kuei Lee; Sen Yin; Jin-Yu Zhang; Zuo-Chang Ye;Yan Wang nad Zhi-ping Yu
PY - 2018
PB - IEEE Dataport
UR - 10.21227/m6xf-3898
ER -
Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu. (2018). An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET. IEEE Dataport. https://dx.doi.org/10.21227/m6xf-3898
Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu, 2018. An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET. Available at: https://dx.doi.org/10.21227/m6xf-3898.

Junctionless Fet

Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu. (2018). 'An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET.' Web.
1. Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu. An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET [Internet]. IEEE Dataport; 2018. Available from : https://dx.doi.org/10.21227/m6xf-3898
Cheng-Kuei Lee, Sen Yin, Jin-Yu Zhang, Zuo-Chang Ye,Yan Wang nad Zhi-ping Yu. 'An Investigation of the Scalability of a 3D Stacked Hybrid P/N Layer and Vertical Gate SOI Junctionless FET.' doi: 10.21227/m6xf-3898

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Junctionless Tunnel Fet

Permalink: http://ieee-dataport.org/documents/investigation-scalability-3d-stacked-hybrid-pn-layer-and-vertical-gate-soi-junctionless

Yoga for mac. DOI Link: https://dx.doi.org/10.21227/m6xf-3898

Short Link: http://ieee-dataport.org/1082

Double Gate Junctionless Fet

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